دیتاشیت FQA6N90C-F109
مشخصات دیتاشیت
| نام دیتاشیت |
FQA6N90C_F109
|
| حجم فایل |
1985.505
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FQA6N90C-F109
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
198W
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Total Gate Charge (Qg@Vgs):
30nC@10V
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Drain Source Voltage (Vdss):
900V
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Input Capacitance (Ciss@Vds):
1.36nF@25V
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Continuous Drain Current (Id):
6A
-
Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
11pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.93Ω@10V,3A
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Package:
TO-3P
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Manufacturer:
onsemi
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Series:
QFET®
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
900V
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Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
2.3Ohm @ 3A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
1770pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
198W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-3PN
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Package / Case:
TO-3P-3, SC-65-3
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Base Part Number:
FQA6
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detail:
N-Channel 900V 6A (Tc) 198W (Tc) Through Hole TO-3PN
